Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity

Takayuki Shirai; Katsunori Danno; Akinori Seki; Hidemitsu Sakamoto; Takeshi Bessho

doi:10.4028/www.scientific.net/MSF.778-780.75

Paper Titles

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method
p.59

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC
p.63

Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent
p.67

Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach
p.71

Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity
p.75

Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents
p.79

Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
p.85

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density
p.91

Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
p.95

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Solution Growth of p-Type 4H-SiC Bulk Crystals...

Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity

Abstract:

P-type 4H-SiC bulk crystals have been grown at a high growth rate of 1.0 mm/h by solution growth using Si-Cr-Al based melt. The crystals grown from solution with an Al content of 10at% show low resistivity of 35 mcm, which is two orders of magnitude lower than commercialwafers (Resistivity: 2500 mcm). The low-resistivity crystals have flat surface and few solvent inclusions. These results indicate that solution growth is a suitable method for fabricating low-resistivity p-type substrates with low cost.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

75-78

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.75

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Online since:

February 2014

Authors:

Takayuki Shirai*, Katsunori Danno, Akinori Seki, Hidemitsu Sakamoto, Takeshi Bessho

Keywords:

Bulk Crystal, Heavily Al-Doped, Low Resistivity, p-Type 4H-SiC, Solution Growth

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