Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method

Isaho Kamata; Norihiro Hoshino; Yuichiro Tokuda; Emi Makino; Jun Kojima; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.778-780.59

Paper Titles

Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis
p.43

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
p.47

4H-SiC Bulk Growth Using High-Temperature Gas Source Method
p.51

Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method
p.55

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method
p.59

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC
p.63

Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent
p.67

Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach
p.71

Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity
p.75

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Dislocation Analysis of 4H-SiC Crystals Obtained...

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method

Abstract:

This paper reports on evidence of high-quality and very fast 4H-SiC crystal growth achieved using a high-temperature gas source method. The formation of threading screw dislocations (TSDs) during crystal growth was examined by comparing synchrotron X-ray topography images taken for a seed and grown crystals, while the generation of a high density of new TSDs is observed under improper growth condition. High-quality crystal growth retaining the TSD density of the seed crystal was accomplished under an improved condition, even for a very high growth rate of 2.1 mm/h.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

59-62

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.59

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Online since:

February 2014

Authors:

Isaho Kamata*, Norihiro Hoshino, Yuichiro Tokuda, Emi Makino, Jun Kojima, Hidekazu Tsuchida

Keywords:

Bulk Growth, Fast 4H-SiC Growth, High-Temperature Gas Source Method, HTCVD

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