Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method

Norihiro Hoshino; Isaho Kamata; Yuichiro Tokuda; Emi Makino; Jun Kojima; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.778-780.55

Paper Titles

Spiral Step Dissociation on PVT Grown SiC Crystals
p.39

Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis
p.43

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
p.47

4H-SiC Bulk Growth Using High-Temperature Gas Source Method
p.51

Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method
p.55

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method
p.59

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC
p.63

Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent
p.67

Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach
p.71

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Fast 4H-SiC Crystal Growth by High-Temperature Gas...

Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method

Abstract:

Possibilities of very fast 4H-SiC crystal growth using a high-temperature gas source method are surveyed by computational simulation and experimental studies. The temperature range suitable to obtain high growth rates are investigated by simulating temperature dependences of growth rates for H₂+SiH₄+C₃H₈ and H₂ +SiH₄+C₃H₈+HCl gas systems. Simulation and experimental results demonstrate that an increase in source gas flow rates as well as gas-flow velocities enhance growth rates. High growth rates exceeding 1 mm/h are experimentally obtained using both gas systems. Single crystal growth on a 3-inch diameter seed crystal is also demonstrated.

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Materials Science Forum (Volumes 778-780)

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55-58

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.55

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Online since:

February 2014

Authors:

Norihiro Hoshino*, Isaho Kamata, Yuichiro Tokuda, Emi Makino, Jun Kojima, Hidekazu Tsuchida

Keywords:

Bulk Growth, HCl, HCVD, High Growth Rate, HTCVD

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