Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC

Tomonori Umezaki; Daiki Koike; Atsushi Horio; Shunta Harada; Toru Ujihara

doi:10.4028/www.scientific.net/MSF.778-780.63

Paper Titles

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
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4H-SiC Bulk Growth Using High-Temperature Gas Source Method
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Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method
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Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method
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Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC
p.63

Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent
p.67

Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach
p.71

Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity
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Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Increase in the Growth Rate by Rotating the Seed...

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC

Abstract:

We studied the effect of rotation speed of seed crystal on the growth rate during the solution growth of SiC. The growth rate increased with increasing rotation speed of the seed crystal. The increase in the growth rate was observed in relatively wide range of carbon concentration. According to the numerical simulation, the carbon concentration gradient near the growth interface under 150 rpm condition is larger than 20 rpm (ACRT) condition. This indicates that increase in the growth rate is caused by the increase in the carbon concentration gradient of the diffusion layer.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

Pages:

63-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.63

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Online since:

February 2014

Authors:

Tomonori Umezaki*, Daiki Koike, Atsushi Horio, Shunta Harada, Toru Ujihara

Keywords:

4H-SiC, Numerical Simulation, Rate Limiting Process, Solution Growth

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