4H-SiC Bulk Growth Using High-Temperature Gas Source Method

Yuichiro Tokuda; Jun Kojima; Kazukuni Hara; Hidekazu Tsuchida; Shoichi Onda

doi:10.4028/www.scientific.net/MSF.778-780.51

Paper Titles

Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT
p.35

Spiral Step Dissociation on PVT Grown SiC Crystals
p.39

Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis
p.43

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
p.47

4H-SiC Bulk Growth Using High-Temperature Gas Source Method
p.51

Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method
p.55

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method
p.59

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC
p.63

Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent
p.67

HomeMaterials Science ForumMaterials Science Forum Vols. 778-7804H-SiC Bulk Growth Using High-Temperature Gas...

4H-SiC Bulk Growth Using High-Temperature Gas Source Method

Abstract:

Our latest results of SiC bulk growth by High-Temperature Gas Source Method　are given in this paper. Based on Mullins-Sekerka instability, optimal growth conditions to preclude dendrite crystals, which are one of the pending issues for high-speed bulk growth, was studied. First, the simulation studies showed that high temperature gradient in a growing crystal is required for high-speed bulk growth without dendrite crystals. Second, high-speed bulk growth was demonstrated under high temperature gradient.

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Materials Science Forum (Volumes 778-780)

Pages:

51-54

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.51

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Online since:

February 2014

Authors:

Yuichiro Tokuda*, Jun Kojima, Kazukuni Hara, Hidekazu Tsuchida, Shoichi Onda

Keywords:

Bulk Growth, Dendrite Crystal, High Growth Rate, High-Speed Growth, HTCVD

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