Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

Tomohisa Kato; Kazuma Eto; Satoru Takagi; Tomonori Miura; Yasushi Urakami; Hiroyuki Kondo; Fusao Hirose; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.47

Paper Titles

Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT
p.31

Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT
p.35

Spiral Step Dissociation on PVT Grown SiC Crystals
p.39

Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis
p.43

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
p.47

4H-SiC Bulk Growth Using High-Temperature Gas Source Method
p.51

Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method
p.55

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method
p.59

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC
p.63

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Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

Abstract:

The nitrogen (N) and aluminum (Al) co-doped growth of n-type 4H-SiC bulk crystals were performed by sublimation method. In the co-doping growth, we achieved the lowest resistivity of 6.9mWcm, and we also confirmed phenomenon of stacking faults suppression in spite of high N concentration more than 8 x 10¹⁹cm^-3.