Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent
p.67
p.67
Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach
p.71
p.71
Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity
p.75
p.75
Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents
p.79
p.79
Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
p.85
p.85
Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density
p.91
p.91
Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
p.95
p.95
Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle
p.99
p.99
Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
p.103
p.103
Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
Abstract:
This paper introduces our recent challenges in fast 4H-SiC CVD growth and defect reduction. Enhanced growth rates in 4H-SiC epitaxial growth by high-speed wafer rotation and in a high-temperature gas source method promoting SiC bulk growth by increasing the gas flow velocity are demonstrated. Trials and results of deflecting threading dislocations by patterned C-face 4H-SiC epitaxial growth are also shown.
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Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
85-90
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Online since:
February 2014
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© 2014 Trans Tech Publications Ltd. All Rights Reserved
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