Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

Hiroaki Fujibayashi; Masahiko Ito; Hideki Ito; Isaho Kamata; Masami Naitou; Kazukuni Hara; Shoichi Yamauchi; Kunihiko Suzuki; Masayoshi Yajima; Shin Ichi Mitani; Katsumi Suzuki; Hirofumi Aoki; Koichi Nishikawa; Takahiro Kozawa; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.778-780.117

Paper Titles

Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle
p.99

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
p.103

C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput
p.109

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor
p.113

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation
p.117

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106
p.121

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate
p.125

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate
p.131

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
p.135

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Fast 4H-SiC Epitaxial Growth on 150 mm Diameter...

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

Abstract:

A single wafer type 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation was developed. The rotation of the wafer at high speed significantly enhances the growth rate, and high growth rates of 40–50 μm/h are possible on 4°off-cut 4H-SiC substrates. In addition, a low defect density and smooth surface without macro step bunching can be achieved. Excellent uniformity of thickness and doping concentration was obtained for a 150 mm wafer at a high growth rate of 50 μm/h.

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Periodical:

Materials Science Forum (Volumes 778-780)

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117-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.117

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Online since:

February 2014

Authors:

Hiroaki Fujibayashi*, Masahiko Ito, Hideki Ito, Isaho Kamata, Masami Naitou, Kazukuni Hara, Shoichi Yamauchi, Kunihiko Suzuki, Masayoshi Yajima, Shin Ichi Mitani, Katsumi Suzuki, Hirofumi Aoki, Koichi Nishikawa, Takahiro Kozawa, Hidekazu Tsuchida

Keywords:

Epitaxial Growth, High Growth Rate, Large Diameter, Uniformity, Wafer Rotation

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