Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Tetsuya Miyazawa; Shi Yang Ji; Kazutoshi Kojima; Yuuki Ishida; Koji Nakayama; Atsushi Tanaka; Katsunori Asano; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.778-780.135

Paper Titles

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation
p.117

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106
p.121

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate
p.125

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate
p.131

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
p.135

Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer
p.139

Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
p.143

An Approach to Trace Defects Propagation during SiC Epitaxy
p.147

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
p.151

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Epitaxial Growth of Thick Multi-Layer 4H-SiC for...

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Abstract:

The epitaxial growth of thick multi-layer 4H-SiC to fabricate very high-voltage C-face n-channel IGBTs is demonstrated using 3-inch diameter wafers. We employ an inverted-growth process, which enables the on-state voltage of resultant IGBTs to be reduced. Furthermore a long minority carrier lifetime (> 10 μs) and a low-resistance p⁺ epilayer can reduce the forward voltage drop of the IGBTs. The small forward voltage drop is demonstrated particularly at high temperatures by fabricating and characterizing simple pin diodes using the epi-wafer.