Comparative Study of Defects in 4H-SiC Epilayers Grown on 4o Off-Axis (0001) and (000-1) Substrates

Takashi Aigo; Wataru Itoh; Tatsuo Fujimoto; Takayuki Yano

doi:10.4028/www.scientific.net/MSF.778-780.143

Paper Titles

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate
p.125

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate
p.131

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
p.135

Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer
p.139

Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
p.143

An Approach to Trace Defects Propagation during SiC Epitaxy
p.147

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
p.151

Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
p.159

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Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates

Abstract:

In this paper, we present a comparison of defects in 4H-SiC epilayers grown on 4^o off-axis (0001) and (000-1) substrates. It was confirmed using high sensitive surface observation and micro-Raman spectroscopy that the generation of epitaxial defects on (000-1) C-face substrates was less susceptible to substrate morphological defects such as pits than that on (0001) Si-face substrates and 'comet-like' defects on (000-1) C-faces were caused by the inclusion of 3C-SiC. Moreover, PL imaging observation showed that stacking fault densities decreased when increasing the growth temperature, and they increased when increasing the C/Si ratio, irrespective of the face polarity. The densities, however, were lower for C-faces at higher growth temperature and C/Si ratio. The present results indicated that C-faces were preferable to Si-faces to achieve smooth step-flow growth suppressing epitaxial defects and stacking faults, which were influenced by the substrate morphological defects and the fluctuation of C/Si ratio in the epitaxial growth.