Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer

Chiaki Kudou; Kentaro Tamura; Jyouji Nishio; Keiko Masumoto; Kazutoishi Kojima; Toshiyuki Ohno

doi:10.4028/www.scientific.net/MSF.778-780.139

Paper Titles

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106
p.121

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate
p.125

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate
p.131

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
p.135

Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer
p.139

Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
p.143

An Approach to Trace Defects Propagation during SiC Epitaxy
p.147

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
p.151

Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155

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Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer

Abstract:

Silicon carbide (SiC) power devices are expected to be useful in low-loss power conversion equipment in wide-ranging industrial areas. 4H-SiC Schottky barrier diodes (SBDs) and metal oxide semiconductor field-effect transistors (MOSFETs) have been launched on the commercial market, and many results obtaining outstanding performance of 4H-SiC switching devices have been reported [1-. Presently, SiC chip cost is a big problem preventing an increase in market penetration of such commercial devices. Therefore, 150 mm size wafers are urgently required reducing the cost per unit area for SiC epitaxial layers. Recently, some SiC wafer vendors announced that 150 mm SiC substrate would be released [4, and some groups have reported results of epitaxial growth on 150 mm SiC substrate [6-9].