Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply

Takayuki Nagano; Koji Sato

doi:10.4028/www.scientific.net/MSF.778-780.155

Paper Titles

Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer
p.139

Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
p.143

An Approach to Trace Defects Propagation during SiC Epitaxy
p.147

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
p.151

Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
p.159

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor
p.163

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
p.167

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
p.171

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Crystal Growth of Highly Oriented Silicon Carbide...

Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply

Abstract:

Silicon carbide (SiC) film on silicon (Si) was synthesized by chemical vapor deposition (CVD) with concurrent gas supply and alternative gas supply. The alternative gas supply method was very effective to improve the crystallinity of silicon carbide at the same experimental condition. The crystallinity was sensitive for source gas concentration and background pressure.