Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

Yoichiro Mitani; Nobuyuki Tomita; Kenichi Hamano; Masayoshi Tarutani; Takanori Tanaka; Akihito Ohno; Takeharu Kuroiwa; Yoshihiko Toyoda; Masayuki Imaizumi; Hiroaki Sumitani; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.778-780.167

Paper Titles

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
p.151

Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
p.159

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor
p.163

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
p.167

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
p.171

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
p.175

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers
p.179

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
p.183

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Demonstration of High Quality 4H-SiC Epitaxy by...

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

Abstract:

A new growth method for considerably suppressing generation of carrot and triangle defects is presented. Based on the investigation for the surfaces before and after the epitaxial growth, it becomes clear that those defects were results from micrometer-scale SiC particles. For removing the particles, pre-flow of H₂ at high temperature before the growth was very effective. The density of those defects strongly depends on the condition of the pre-flow and especially decreased at Tp=1575°C and tp=180 sec.