Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect

Yuuki Ishida; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.778-780.183

Paper Titles

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
p.167

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
p.171

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
p.175

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers
p.179

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
p.183

Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate
p.187

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate
p.193

Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth
p.197

First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface
p.201

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Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect

Abstract:

We have developed the computer simulation including cluster effect and Schwoebel effect and investigated the conditions generating GSB using the simulation. We have demonstrated that the simulation developed can reproduce GSB. We have found for the occurence of GSB that there exists a threshold value of the surplus flux rate of Si-or C-source gases not contributing to growth, which depends on the flux rate of each source gas, namely the boundary between with and without GSB. It is noted that this boundary does not depend on the off-angle of substrates. We have also found the mechanism for explaining the occurrence of wavy surface morphplogy.