4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate

Akira Miyasaka; Jun Norimatsu; Keisuke Fukada; Yutaka Tajima; Yoshiaki Kageshima; Daisuke Muto; Michiya Odawara; Taichi Okano; Kenji Momose; Yuji Osawa; Hiroshi Osawa; Takayuki Sato

doi:10.4028/www.scientific.net/MSF.778-780.193

Paper Titles

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
p.175

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers
p.179

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
p.183

Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate
p.187

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate
p.193

Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth
p.197

First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface
p.201

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates
p.206

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
p.210

HomeMaterials Science ForumMaterials Science Forum Vols. 778-7804H-SiC Epitaxial Growth on C-Face 150 mm SiC...

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate

Abstract:

The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrates. Several growth parameters and hardware were optimized to obtain high uniformity wafers. We have succeeded in fabricating high quality C-face wafers with smooth surface and high uniformity.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

193-196

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.193

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Online since:

February 2014

Authors:

Akira Miyasaka*, Jun Norimatsu, Keisuke Fukada, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Michiya Odawara, Taichi Okano, Kenji Momose, Yuji Osawa, Hiroshi Osawa, Takayuki Sato

Keywords:

150-Mm Diameter, 4H-SiC Epitaxial Growth, C-Face, PL, Polishing, Surface Defect, Surface Morphology, Uniformity

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