Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate

Kassem Alassaad; Véronique Soulière; Beatrice Doisneau; François Cauwet; Hervé Peyre; Davy Carole; Didier Chaussende; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.778-780.187

Paper Titles

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
p.171

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
p.175

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers
p.179

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
p.183

Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate
p.187

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate
p.193

Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth
p.197

First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface
p.201

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates
p.206

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Ge Assisted SiC Epitaxial Growth by CVD on SiC...

Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate

Abstract:

This paper presents the results obtained after chemical vapor deposition of SiC with the addition of GeH₄ gas to the classical SiH₄+C₃H₈ precursor system. Epitaxial growth was performed either on 8°off-axis or on-axis 4H-SiC substrate in the temperature range 1500-1600°C. In the off-axis case, the layer quality (surface morphology and defect density) does not change though accompanied with Ge droplets accumulation at the surface. The Ge incorporation level was found to increase with temperature in the 10¹⁷ 10¹⁸ cm^-3ranges. It was observed that adding GeH₄ leads to the increase of the n type doping level by a factor from 2 to 5 depending on the C/Si ratio. In the on-axis case, GeH₄ was only added to the gas phase before starting the SiC growth. It was found that there is a conditions window (temperature and GeH₄ flux) for which 3C-SiC twin free layers can be grown. Adding this foreign element before SiC growth clearly modifies SiC nucleation on on-axis substrate.

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Materials Science Forum (Volumes 778-780)

Pages:

187-192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.187

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Online since:

February 2014

Authors:

Kassem Alassaad*, Véronique Soulière, Beatrice Doisneau, François Cauwet, Hervé Peyre, Davy Carole, Didier Chaussende, Gabriel Ferro

Keywords:

Chemical Vapor Deposition (CVD), Germanium, Heteroepitaxy, Homoepitaxy, In Situ Pretreatment, Incorporation

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