Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

Jawad Hassan; Heung Taek Bae; Louise Lilja; Ildiko Farkas; Ickchan Kim; Pontus Stenberg; Jian Wu Sun; Olle Kordina; Peder Bergman; Seoyong Ha; Erik Janzén

doi:10.4028/www.scientific.net/MSF.778-780.179

Paper Titles

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor
p.163

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
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Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
p.171

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
p.175

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers
p.179

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
p.183

Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate
p.187

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate
p.193

Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth
p.197

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch...

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

Abstract:

We report the development of over 100 μm/h growth rate process on 4-inch diameter wafers using chlorinated growth. The optimized growth process has shown extremely smooth epilayers completely free of surface step-bunching with very low surface defect density, high uniformity in thickness and doping and high run to run reproducibility in growth rate, controlled doping and defect density.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

179-182

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.179

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Online since:

February 2014

Authors:

Jawad Hassan*, Heung Taek Bae, Louise Lilja, Ildiko Farkas, Ickchan Kim, Pontus Stenberg, Jian Wu Sun, Olle Kordina, Peder Bergman, Seoyong Ha, Erik Janzén

Keywords:

Atomic Force Microscopy (AFM), Chlorinated Growth, Fast Epitaxial Growth, High Growth Rate

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References

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