Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates

Masahiko Ito; Hiroaki Fujibayashi; Hideki Ito; Isaho Kamata; Masami Naito; Kazukuni Hara; Shoichi Yamauchi; Kunihiko Suzuki; Masayoshi Yajima; Shin Ichi Mitani; Katsumi Suzuki; Hirofumi Aoki; Koichi Nishikawa; Takahiro Kozawa; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.778-780.171

Paper Titles

Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
p.159

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor
p.163

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
p.167

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
p.171

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
p.175

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers
p.179

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
p.183

Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate
p.187

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Simulation Study of High-Speed Wafer Rotation...

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates

Abstract:

The effects of high-speed wafer rotation for 4H-SiC epitaxy in newly developed 150 mm vertical reactor is investigated by simulation analysis. The simulation model shows a good agreement with experimental results. It is revealed that a combination of high-speed wafer rotation as high as 1000 rpm and relatively high system pressure of 267 mbar is effective to reducing boundary layer thickness above the 4H-SiC wafer, and greatly enhances the epitaxial growth rates. The growth rate increase ~2 times using the combination of high-speed wafer rotation and relatively high system pressure.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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171-174

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.171

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Online since:

February 2014

Authors:

Masahiko Ito*, Hiroaki Fujibayashi, Hideki Ito, Isaho Kamata, Masami Naito, Kazukuni Hara, Shoichi Yamauchi, Kunihiko Suzuki, Masayoshi Yajima, Shin Ichi Mitani, Katsumi Suzuki, Hirofumi Aoki, Koichi Nishikawa, Takahiro Kozawa, Hidekazu Tsuchida

Keywords:

Epitaxial Growth, Large Diameter, Simulation, Wafer Rotation

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