50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

Yong Qiang Sun; Gan Feng; Zhe Yang Li; Li Ping Lv; Jin Yun Luo; Jin Bo Wu; Yi Yang Li; Jian Hui Zhang

doi:10.4028/www.scientific.net/MSF.778-780.163

Paper Titles

An Approach to Trace Defects Propagation during SiC Epitaxy
p.147

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
p.151

Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
p.159

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor
p.163

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
p.167

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
p.171

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
p.175

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers
p.179

HomeMaterials Science ForumMaterials Science Forum Vols. 778-78050 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth...

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

Abstract:

Homo-epitaxial growth of 50 μm-thick 4H-SiC on 4° off-axis 100 mm substrates have been demostrated by using a commercial warm-wall multi-wafer planetary reactor (Aixtron 2800 G4). With optimized process, epitaxial layer with an average thickness of 48.146 μm and doping level of 8.39×10¹⁴/cm³ are obtained. The thickness uniformity with an edge exclusion of 5 mm are 1.30% (σ/mean) and 2.17% (max-min/max+min), and the doping level uniformity are 4.66% (σ/mean) and 6.95% (max-min/max+min), respectively. Surface roughness of the as-grown 50 μm-thick epitaxial layer has an RMS value of 0.606 nm with one step bunching on the 20×20 μm² areas. This initial effort on thick 4H-SiC homoepitaxial growth indicates that this comercial multi-wafer planetary reactor has the potential for mass production of SiC epiwafers for 5000 V and above power devices.