Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

Shi Yang Ji; Kazutoshi Kojima; Yuuki Ishida; Hirotaka Yamaguchi; Shingo Saito; Tomohisa Kato; Hidekazu Tsuchida; Sadafumi Yoshida; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.151

Paper Titles

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
p.135

Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer
p.139

Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
p.143

An Approach to Trace Defects Propagation during SiC Epitaxy
p.147

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
p.151

Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
p.159

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor
p.163

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
p.167

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Characterization of the Defect Evolution in Thick...

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

Abstract:

The defect evolution on 90 μm-thick heavily Al-doped 4H-SiC epilayers with Al doping level higher than 10²⁰ cm^-3 was studied by tracing back to initial growth stage to monitor major dislocations and their propagations in each growth stage. Results from X-ray topography and KOH etching demonstrate that all existing dislocations on the surface of 90 μm-thick epilayer can be identified as the defects originating from substrate. In other words, there seems no new dislocation generated after a long-term growth. Nevertheless, a high density of misfit dislocation was found appearing near the substrate/epilayer interface for epilayer with Al doping level of 3.5×10²⁰ cm^-3, while misfit dislocation cannot be seen on epilayer with Al doping level of 1.5×10²⁰ cm^-3.