Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate
p.131
p.131
Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
p.135
p.135
Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer
p.139
p.139
Comparative Study of Defects in 4H-SiC Epilayers Grown on 4o Off-Axis (0001) and (000-1) Substrates
p.143
p.143
An Approach to Trace Defects Propagation during SiC Epitaxy
p.147
p.147
Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
p.151
p.151
Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155
p.155
Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
p.159
p.159
50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor
p.163
p.163
An Approach to Trace Defects Propagation during SiC Epitaxy
Abstract:
In this work, the generation of in-grown SFs, half-moon defects, and carrot defects in SiC epilayer is studied by using epitaxy-etch-epitaxy approach. It is found that under our growth conditions, most of these defects have a similar origin, and they nucleate at obstacles to step flow at the SiC substrate/epilayer interface. These obstacles may be micropipes, scratches, or foreign particles on the substrate surface.
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Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
147-150
Citation:
Online since:
February 2014
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© 2014 Trans Tech Publications Ltd. All Rights Reserved
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