Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate

Xun Li; Erik Janzén; Anne Henry

doi:10.4028/www.scientific.net/MSF.778-780.131

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC...

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate

Abstract:

The growth of 4H-SiC epilayers on 1.28^o off-cut substrates is reported in this study and comparison when using standard 4^o and 8^o off-cut substrates is added. Growth at high temperature is needed for the polytype stability, whereas low C/Si is requested to decrease both triangular defects density and roughness of the grown surface. An in-situ etching with Si rich ambient allows the growth of epilayers with specular surface. The formation of Si droplets can be observed on the grown surfaces when lowering the growth temperature and appears first for the high off-cut angle.

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Materials Science Forum (Volumes 778-780)

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131-134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.131

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Online since:

February 2014

Authors:

Xun Li, Erik Janzén, Anne Henry*

Keywords:

Atomic Force Microscopy (AFM), Chemical Vapor Deposition (CVD), Epitaxy, Low-Off Axis, Morpholoy

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