Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

Kazutoshi Kojima; Keiko Masumoto; Sachiko Ito; Akiyo Nagata; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.125

Paper Titles

C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput
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Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor
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Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation
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4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106
p.121

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate
p.125

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate
p.131

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
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Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer
p.139

Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
p.143

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Development of Homoepitaxial Growth Technique on...

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

Abstract:

We have investigated key factors for controlling the polytype and surface morphology of 4H-SiC homoepitaxial growth on less than 4^o off-axis substrates. In addition, we characterized the crystal quality and surface quality of the epitaxial layer of an entire 3-inch vicinal off angled substrate. The results suggested that the control of surface free energy, control of the vicinal off angle itself, and high temperature growth, is highly important in controlling the surface morphology and polytype stability of the epitaxial layer grown on a vicinal off angled substrate. We also obtained a high-quality epitaxial layer grown on a 3-inch vicinal off angle substrate, which was comparable to those on 4^ooff-axis substrates.

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Materials Science Forum (Volumes 778-780)

Pages:

125-130

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.125

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Online since:

February 2014

Authors:

Kazutoshi Kojima, Keiko Masumoto, Sachiko Ito, Akiyo Nagata, Hajime Okumura

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), C/Si Ratio, Conversion, Homoepitaxy, Morpholoy, Off Angle, Polytype, Surface Energy, Vicinal

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References

[1] K. Shibahara, N. Kuroda, S. Nishino and H. Matsunami, Jpn. J. Appl. Phys. 26 (1987) L1815.

Google Scholar

[2] H. S. Kong, J. T. Glass and R. F. Davis, J. Appl. Phys. 64 (1988) 2672.

Google Scholar

[3] http: /www. cree. com.

Google Scholar

[4] K. Kosciewicz, W. Strupinski, D. Teklinska, K. Mazur, M. Tokarczyk, G. Kowalski and A. Olszyna, Mater. Sci. Forum 679-680 (2011) 95.

DOI: 10.2478/s11534-010-0136-3

Google Scholar

[5] S. Harada S. Ito, M. Kato, A. Takatsuka, K. Kojima, K. Fukuda and H. Okumura, Mater. Sic. Forum, 645-648 (2010) 999.

DOI: 10.4028/www.scientific.net/msf.645-648.999

Google Scholar

[6] Y. Ueoka, K. Shingu, H. Yano, T. Hatayama, and T. Fuyuki, Jpn. J. Appl. Phys. 51 (2012) 110201.

DOI: 10.7567/jjap.51.110201

Google Scholar

[7] K. Kojima, H. Okumura, S. Kuroda and K. Arai, J. Crystal Growth 269 (2004) 367.

Google Scholar

[8] K. Kojima, S. Ito, J. Senzaki and H. Okumura, Mater. Sci. Forum 645-648 (2010) 99.

Google Scholar

[9] K. Kojima, S. Ito, A. Nagata and H. Okumurai, Mater. Sci. Forum 717-720 (2012) 141.

Google Scholar

[10] K. Masumoto, K. Kojima and H. Okumura, Mater. Sci. Forum 717-720 (2013) 193.

Google Scholar

[11] M. Syväjärvi, R. Yakimova and E. Janzén, J. Electrochem. Soc. 146 (1999) 1565.

Google Scholar

[12] K. Kojima, S. Nishizawa, S. Kuroda, H. Okumura and K. Arai, J. Crystal Growth 275 (2005) e549.

Google Scholar

[13] S. Nakamura, T. Kimoto and H. Matsunami, Jpn. J. Appl. Phys. 42 (2003) L846.

Google Scholar

[14] K. Masumoto, S. Ito, H. Goto, K. Tamura, C. Kudou, J. Nishio, K. Kojima, T. Ohno and H. Okumura, will be presented in this conference.

Google Scholar

[15] J. Hassan, J.P. Bergman, A. Henry, E. Janze´n, J. Crystal Growth 310 (2008) 4424.

Google Scholar