Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates

Louise Lilja; Jawad Hassan; Erik Janzén; J. Peder Bergman

doi:10.4028/www.scientific.net/MSF.778-780.206

Paper Titles

Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate
p.187

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate
p.193

Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth
p.197

First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface
p.201

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates
p.206

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
p.210

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System
p.214

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
p.218

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer
p.222

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Improved Epilayer Surface Morphology on 2˚ Off-Cut...

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates

Abstract:

Homoepitaxial layers of 4H-SiC were grown with horizontal hot-wall CVD on 2˚ off-cut substrates, with the purpose of improving the surface morphology of the epilayers and reducing the density of surface morphological defects. In-situ etching conditions in either pure hydrogen or in a mixture of silane and hydrogen prior to the growth were compared as well as C/Si ratios in the range 0.8 to 1.0 during growth. The smoothest epilayer surface, together with lowest defect density, was achieved with growth at a C/Si ratio of 0.9 after an in-situ etching in pure hydrogen atmosphere.

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Materials Science Forum (Volumes 778-780)

Pages:

206-209

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.206

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Online since:

February 2014

Authors:

Louise Lilja, Jawad Hassan, Erik Janzén, J. Peder Bergman*

Keywords:

Atomic Force Microscopy (AFM), Epitaxial Growth, Horizontal Hot-Wall CVD, Vicinal Off Angle

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References

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