Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System

Abstract:

We have grown epitaxial layers on 2° off-cut 4H-SiC(0001) Si-face substrates. The epitaxial layer surfaces on 2° off-cut substrates are more prone to generate step-bunching than on 4° off-cut substrates, which are observed by confocal microscopy with differential interference contrast. We have speculated that the step-bunching is generated at the beginning of an epitaxial growth. Triangular defect density of epitaxial layers on 2° off-cut substrates is as low as 0.7 cm^–2 for the size corresponding to 150 mm. We have firstly reported distribution of 2° off-cut epitaxial layers for the 150-mm size using two 76.2-mm wafers: σ/mean = 3.3% for thickness, σ/mean = 7.3% for carrier concentration.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 214-217
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.214
• Online since: February 2014
• Authors: Kentaro Tamura*, Chiaki Kudou, Keiko Masumoto, Johji Nishio, Kazutoshi Kojima
• Keywords: Chemical Vapor Deposition (CVD), Confocal Microscopy, Epitaxy, Off-Angle, Silicon Carbide (SiC), Step Bunching, Surface Morphology, Triangular Defect, Uniformity

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