Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate

Véronique Soulière; Arthur Vo-Ha; Davy Carole; Alexandre Tallaire; Ovidiu Brinza; Jose Carlos Pinero; Daniel Araujo; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.778-780.226

Paper Titles

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
p.210

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System
p.214

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
p.218

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer
p.222

Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate
p.226

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC
p.230

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
p.234

Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
p.238

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
p.243

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Heteroepitaxial CVD Growth of 3C-SiC on Diamond...

Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate

Abstract:

This work presents the successful CVD heteroepitaxial growth of 3C-SiC on diamond (100) substrates. When performing a direct SiC growth at 1500°C on such substrate, it leads to polycrystalline deposit. The use of a substrate pretreatment involving silicon deposition allows forming a more continuous and smoother layer. Electron BackScatter Diffraction and Transmission Electron Microscopy all revealed that the 3C-SiC layer grown on the (100) diamond substrate is monocrystalline and well oriented.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

226-229

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.226

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Online since:

February 2014

Authors:

Véronique Soulière, Arthur Vo-Ha, Davy Carole, Alexandre Tallaire, Ovidiu Brinza, Jose Carlos Pinero, Daniel Araujo, Gabriel Ferro

Keywords:

3C-SiC, CVD, Diamond Substrate, Heteroepitaxy

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