Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

P. Kwasnicki; V. Jokubavicius; J.W. Sun; Hervé Peyre; R. Yakimova; Mikael Syväjärvi; Jean Camassel; Sandrine Juillaguet

doi:10.4028/www.scientific.net/MSF.778-780.243

Paper Titles

Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate
p.226

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC
p.230

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
p.234

Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
p.238

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
p.243

A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures
p.247

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates
p.251

Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition
p.255

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition
p.261

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Optical Investigation of 3C-SiC Hetero-Epitaxial...

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

Abstract:

We investigated three 3C-SiC samples grown on 6H SiC substrate by sublimation epitaxy under gas atmosphere. We focus on the low temperature photoluminescence and Raman measurements to show that compare to a growth process under vacuum atmosphere, the gas atmosphere favor the incorporation of impurities at already existing and/or newly created defect sites.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

243-246

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.243

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Online since:

February 2014

Authors:

P. Kwasnicki, V. Jokubavicius, J.W. Sun, Hervé Peyre, R. Yakimova, Mikael Syväjärvi, Jean Camassel, Sandrine Juillaguet

Keywords:

3C-SiC, Low Temperature Photoluminescence, RAMAN, Sublimation Epitaxy

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