A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures

Alexander A. Lebedev; Maria V. Zamoryanskaya; Sergey Yu. Davydov; Demid A. Kirilenko; Sergey P. Lebedev; Lev M. Sorokin; Denis B. Shustov; Mikhail P. Shcheglov

doi:10.4028/www.scientific.net/MSF.778-780.247

Paper Titles

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC
p.230

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
p.234

Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
p.238

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
p.243

A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures
p.247

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates
p.251

Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition
p.255

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition
p.261

Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures
p.265

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780A Study of the Intermediate Layer in 3C-SiC/6H-SiC...

A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures

Abstract:

Transmission electron microscopy and the cathodoluminescence method have been used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers, with possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the spinodal decomposition model

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

Pages:

247-250

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.247

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Online since:

February 2014

Authors:

Alexander A. Lebedev, Maria V. Zamoryanskaya, Sergey Yu. Davydov, Demid A. Kirilenko, Sergey P. Lebedev, Lev M. Sorokin, Denis B. Shustov, Mikhail P. Shcheglov

Keywords:

3C-SiC/6H-SiC Heterostructures, Cathodoluminescence, Spinodal Decomposition, Sublimation Epitaxy

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