The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC

Yukimune Watanabe; Tsuyoshi Horikawa; Kiichi Kamimura

doi:10.4028/www.scientific.net/MSF.778-780.230

Paper Titles

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System
p.214

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
p.218

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer
p.222

Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate
p.226

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC
p.230

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
p.234

Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
p.238

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
p.243

A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures
p.247

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The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC

Abstract:

The carbonized layer for a buffer layer strongly influences the crystalline quality of the 3C-SiC epitaxial films on the Si substrates. The growth mechanism of the carbonized layer strongly depended on the process conditions. The surface of silicon substrate was carbonized under the pressure of 7.8 × 10^-3 Pa or 7.8 × 10^-2 Pa in this research. Under the relatively low pressure of 7.8 × 10^-3 Pa, the carbonized layer was grown by the epitaxial mechanism. The crystal axis of the carbonized layer grown under this pressure was confirmed to coincide with the crystal axis of the Si substrate from the results of the selected area electron diffraction (SAED) analysis. Under the relatively high pressure condition of 7.8 × 10^-2 Pa, the carbonized layer was grown by the diffusion mechanism. The result of the SAED pattern and the XTEM image indicated that this layer consisted of small grainy crystals and their crystal axes inclined against the growth direction. It was confirmed that the crystalline quality of the SiC film deposited on the carbonized layer grown by the epitaxial mechanism is better than that deposited on the layer grown by the diffusion mechanism.