Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

Yuuki Ishida; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.778-780.222

Paper Titles

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates
p.206

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
p.210

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System
p.214

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
p.218

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer
p.222

Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate
p.226

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC
p.230

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
p.234

Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
p.238

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Simulation Studies on Giant Step Bunching...

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

Abstract:

Trapezoid-shape (T-S) defects on epilayer surfaces, which include two kinds of the giant step bunching (GSB), are one of killer defects for MOSFETs. We have investigated the generation mechanism of the two GSBs using "step kinetics simulator" we developed. The simulator has reproduced the behavior of the GSBs. Based on results from the simulation, we have discussed the generation mechanism of the two GSBs.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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222-225

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.222

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Online since:

February 2014

Authors:

Yuuki Ishida*, Sadafumi Yoshida

Keywords:

Epitaxial Growth, Giant Step Bunching, Kinematic Wave, Schwoebel Effect, Simulation, Trapezoid-Shape Defects

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