Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements

Örjan Danielsson; Olof Kordina; Erik Janzén

doi:10.4028/www.scientific.net/MSF.778-780.218

Paper Titles

First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface
p.201

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates
p.206

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
p.210

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System
p.214

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
p.218

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer
p.222

Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate
p.226

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC
p.230

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
p.234

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Simulations of SiC CVD - Perspectives on the Need...

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements

Abstract:

Simulations of SiC chemical vapor deposition is an excellent tool for understanding, improving and optimizing this complex process. However, models used up to date have often been validated for one particular set of process parameters, often in the silicon limited growth regime, in one particular growth equipment. With chlorinated precursors optimal growth condition is often found to take place at the border between carbon limited and silicon limited regimes. At those conditions the previous models fail to predict deposition rates properly. In this study we argue that molecules like C₂H₂, C₂H₄ and CH₄, actually might react with the surface with much higher rates than suggested before. Comparisons are made between the previous model and our new model, as well as experiments. It is shown that higher reactivities of the hydrocarbon molecules will improve simulation results as compared to experimental findings, and help to better explain some of the trends for varying C/Si ratios.