3C-SiC Seeded Growth on Diamond Substrate by VLS Transport

Arthur Vo-Ha; Mickaël Rebaud; Davy Carole; Mihai Lazar; Alexandre Tallaire; Véronique Soulière; Jose Carlos Pinero; Daniel Araujo; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.778-780.234

Paper Titles

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
p.218

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer
p.222

Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate
p.226

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC
p.230

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
p.234

Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates
p.238

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
p.243

A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures
p.247

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates
p.251

HomeMaterials Science ForumMaterials Science Forum Vols. 778-7803C-SiC Seeded Growth on Diamond Substrate by VLS...

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport

Abstract:

This work deals with the localized epitaxial growth of SiC on (100) diamond substrate using the Vapour-Liquid-Solid (VLS) transport. An epitaxial relationship of grown SiC with the seed was succesfully achieved when inserting a silicidation step before the VLS growth. This silicidation consists in the formation of a SiC intermediate layer on the diamond substrate by solid-state reaction with a silicon layer deposited at 1000 or 1350 °C. On the 1350°C formed SiC buffer layer, p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. For the 1000°C buffer layer, the SiC deposit after VLS growth is much denser but mostly polycrystalline. Interfacial reactivity and diffusion are considered to explain the obtained results.