10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters

Matthieu Florentin; Mihaela Alexandru; Aurore Constant; Bernd Schmidt; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.806.121

Paper Titles

Synthesis and Characterization of (3-Aminopropyl)Triethoxysilane-Modified Epitaxial Graphene
p.95

Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces
p.103

Anti-Reflective Porous Silicon Features by Substrate Conformal Imprint Lithography for Silicon Photovoltaic Applications
p.109

Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode
p.117

10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters
p.121

Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect
p.127

Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO₂/4H-SiC MOS Structures
p.133

Stable Phosphorus Passivated SiO₂/4H-SiC Interface Using Thin Oxides
p.139

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N₂O and POCl₃
p.143

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10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters

Abstract:

This work presents the 10 MeV protons irradiation effects on 4H-SiC MOSFETs at different fluences. MOSFETs main electrical parameters, such as the channel mobility (µ_EFF), threshold voltage (V_TH), transconductance (g_m) and subthreshold current, were analyzed using the time bias stress instability (BSI) technique. Applying this method allowed us to study the effect of carriers interaction with generated interface traps, whether in the bulk or at the interface. Improvements, such as V_THstabilization in time and a significant increase of the µ_EFFat high fluencies, have been noticed. We assume that this behavior is connected with the atomic diffusion from the SiO₂/SiC interface, towards the epilayer during proton irradiation. These atoms, in majority Nitrogen, may create other bonds by occupying various vacancies coming from Silicon and Carbon’s dangling bond. Therefore, by enhancing the passivated Carbon atoms number, we show that high irradiation proton could be a way to improve the SiO₂/SiC interface quality.