Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

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In this work, electrical properties of lateral n-channel MOSFETs implanted with differentnitrogen doses in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing nitrogen implantation doses is observed. Interface trap density (Dit) was determined from the experimentally measured Hall carrier density. Our results show a high Dit near and within the conduction band that does not change significantly when the nitrogen implantation dose is increased, despite observed mobility improvement.

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Edited by:

Marcin Zielinski

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127-132

Citation:

G. Ortiz et al., "Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect", Materials Science Forum, Vol. 806, pp. 127-132, 2015

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October 2014

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