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10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters
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Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

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Abstract:

In this work, electrical properties of lateral n-channel MOSFETs implanted with differentnitrogen doses in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing nitrogen implantation doses is observed. Interface trap density (Dit) was determined from the experimentally measured Hall carrier density. Our results show a high Dit near and within the conduction band that does not change significantly when the nitrogen implantation dose is increased, despite observed mobility improvement.

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Periodical:

Materials Science Forum (Volume 806)

Pages:

127-132

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.127

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Online since:

October 2014

Authors:

Guillermo Ortiz*, Vincent Mortet, Chrisitan Strenger, Viktoryia Uhnevionak, Alexander Burenkov, Anton J. Bauer, Peter Pichler, Fuccio Cristiano, Eléna Bedel-Pereira

Keywords:

4H-SiC MOSFET, Density of Interface Traps, Hall Mobility, Inversion Carrier Density

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