The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors

Stephen M. Thomas; Michael R. Jennings; Y.K. Sharma; C.A. Fisher; P.A. Mawby

doi:10.4028/www.scientific.net/MSF.806.149

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The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors
p.149

HomeMaterials Science ForumMaterials Science Forum Vol. 806The Impact of Oxygen Flow Rate on the Oxide...

The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors

Abstract:

Silicon carbide based devices have the potential to surpass silicon technology in high power, high frequency and high temperature applications. 4H-SiC MOS transistors currently suffer from a low channel mobility due to a high density of traps near the oxide/SiC interface. In this work, oxides have been grown on the Si face of 4H-SiC using oxygen flow rates ranging from 2.5 l/min to 0.05 l/min. Capacitance-voltage measurements on MOS capacitors revealed approximately a fourfold reduction in the interface trap density and a 25% increase in oxide thickness by reducing the flow rate from 2.5 l/min to 0.05 l/min.

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Periodical:

Materials Science Forum (Volume 806)

Pages:

149-152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.149

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Online since:

October 2014

Authors:

Stephen M. Thomas, Michael R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby

Keywords:

4H-SiC, Interface Trap Density, MOS, Oxidation

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References

[1] G.Y. Chung, C.C. Tin, J.R. Williams et al., Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide, Applied Physics Letters 76 (2000) 1713-1715.

DOI: 10.1063/1.126167

Google Scholar

[2] J. Rozen A.C. Ahyi, X. Zhu et al., Scaling between channel mobility and interface state density in SiC MOSFETs, IEEE Transactions on Electron Devices 58 (2011) 3808-3811.

DOI: 10.1109/ted.2011.2164800

Google Scholar

[3] X. Zhu, A.C. Ahyi, M. Li et al., The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices, Solid-State Electronics 57 (2011) 76-79.

DOI: 10.1016/j.sse.2010.12.002

Google Scholar

[4] Y. Song, S. Dhar, L.C. Feldman, Modified Deal and Grove model for the thermal oxidation of silicon carbide, Journal of Applied Physics, 95 (2004) 4953-4957.

DOI: 10.1063/1.1690097

Google Scholar

[5] J.M. Knaup, P. Deak, T. Frauenheim et al., Theoretical study of the mechanism of dry oxidation of 4H-SiC, Physical review B, 71 (2005) 235321-9.

Google Scholar

[6] A. Gavrikov, A. Knizhnik, A. Safonov et al., First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation, Journal of applied physics, 104 (2008) 093508-9.

DOI: 10.1063/1.3006004

Google Scholar

[7] A. Koh, A. Kestle, C. Wright et al., Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide, Applied Surface Science, 174 (2001) 210-216.

DOI: 10.1016/s0169-4332(01)00150-7

Google Scholar

[8] B.E. Deal and A.S. Grove, General relationship for the thermal oxidation of silicon, Journal of Applied Physics 36 (1965) 3770-3778.

DOI: 10.1063/1.1713945

Google Scholar

[9] J.M. Knaup, P. Deak, T. Frauenheim et al., Defects in SiO2 as the possible origin of near interface traps in the SiC/SiO2 system: A systematic theoretical study, Physical review B, 72 (2005) 115323-9.

Google Scholar