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p.149

The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors

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Abstract:

Silicon carbide based devices have the potential to surpass silicon technology in high power, high frequency and high temperature applications. 4H-SiC MOS transistors currently suffer from a low channel mobility due to a high density of traps near the oxide/SiC interface. In this work, oxides have been grown on the Si face of 4H-SiC using oxygen flow rates ranging from 2.5 l/min to 0.05 l/min. Capacitance-voltage measurements on MOS capacitors revealed approximately a fourfold reduction in the interface trap density and a 25% increase in oxide thickness by reducing the flow rate from 2.5 l/min to 0.05 l/min.

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Periodical:

Materials Science Forum (Volume 806)

Pages:

149-152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.149

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Online since:

October 2014

Authors:

Stephen M. Thomas, Michael R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby

Keywords:

4H-SiC, Interface Trap Density, MOS, Oxidation

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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