Paper Titles

Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces
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Anti-Reflective Porous Silicon Features by Substrate Conformal Imprint Lithography for Silicon Photovoltaic Applications
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Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode
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10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters
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Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect
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Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO₂/4H-SiC MOS Structures
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Stable Phosphorus Passivated SiO₂/4H-SiC Interface Using Thin Oxides
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Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N₂O and POCl₃
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The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors
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HomeMaterials Science ForumMaterials Science Forum Vol. 806Stable Phosphorus Passivated SiO2/4H-SiC Interface...

Stable Phosphorus Passivated SiO₂/4H-SiC Interface Using Thin Oxides

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Abstract:

The NO (nitric oxide) passivation process for 4H-SiC MOSFETs (silicon carbide metal-oxide-semiconductor filed effect transistors) effectively reduces the interface trap density and increases the inversion channel mobility from less that 10 to around 35cm²/V.s, only 5% of the bulk mobility. Recent results on the phosphorous passivation of the SiO₂/4H-SiC interface have shown that it improves the mobility to about 90 cm²/V.s. Phosphorous passivation converts oxide (SiO₂) into phosphosilicate glass (PSG) which is a polar material and results in device instabilities under abias-temperature stress (BTS) measurements. To limit the polarization effect, a new thin PSG process has been developed. The interface trap density of 4H-SiC-MOS capacitors using this process is as low as 3x10¹¹cm^-2 eV^-1. BTS results on MOSFETs have shown that the thin PSG devices are as stable as NO passivated devices with mobility around 80 cm²/V.s.

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HeteroSiC & WASMPE 2013

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Periodical:

Materials Science Forum (Volume 806)

Pages:

139-142

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.139

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Online since:

October 2014

Authors:

Yogesh K. Sharma*, A.C. Ahyi, Tamara Issacs-Smith, M.R. Jennings, S.M. Thomas, Philip Andrew Mawby, Sarit Dhar, John R. Williams

Keywords:

Bias-Temperature Stress, Interface-Passivation, Silicon Carbide (SiC), Stability

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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