Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO₂/4H-SiC MOS Structures

Abstract:

The electrical properties of metal-oxide-semiconductor (MOS) devices fabricated using dry oxidation on phosphorus-implanted n-type 4H-SiC (0001) epilayers have been investigated. MOS structures were compared in terms of interface traps and reliability with reference sample which was produced by dry oxidation under the same conditions. The notably lower interface traps density measured in MOS capacitor with phosphorus concentration exceeding 10¹⁸ cm^-3 at the SiO₂/SiC interface was attributed to interface traps passivation by incorporated phosphorus ions.

• Periodical: Materials Science Forum (Volume 806)
• Pages: 133-138
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.806.133
• Online since: October 2014
• Authors: Aleksey Mikhaylov*, Tomasz Sledziewski, Alexey Afanasyev, Victor Luchinin, Sergey A. Reshanov, Adolf Schöner, M. Krieger
• Keywords: 4H-SiC, Implantation, Interface, MOS, Oxidation, Oxide, Phosphorus, Trap, TZDB

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