Progress of SiC Epitaxy on 150mm Substrates

Jie Zhang; Bernd Thomas; Kevin Moeggenborg; Victor M. Torres; Darren Hansen

doi:10.4028/www.scientific.net/MSF.821-823.161

Paper Titles

Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC
p.145

Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers
p.149

150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
p.153

Epitaxial Growth on 150 mm 2° off Wafers
p.157

Progress of SiC Epitaxy on 150mm Substrates
p.161

SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
p.165

Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC
p.169

Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers
p.173

Influence of Epi-Layer Growth Pits on SiC Device Characteristics
p.177

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Progress of SiC Epitaxy on 150mm Substrates

Progress of SiC Epitaxy on 150mm Substrates

Abstract:

This paper presents the current performance of 150mm SiC epitaxy on state-of-the-art 150mm substrates. Excellent on-wafer uniformity has been achieved with mean thickness uniformity at 1.8% and mean doping uniformity at 5.4%. The epilayer surface is smooth across wafer diameter with a typical defect density below 1 cm^-2. Within a run, wafer-to-wafer variation of 0.7 % for thickness and 5% for doping is demonstrated. The mean values of warp and bow after epitaxy are 35 um 15 μm, respectively. The above metrics are critical to enable cost effective production of 150mm SiC epiwafers suited for device fabrication.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

161-164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.161

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Online since:

June 2015

Authors:

Jie Zhang*, Bernd Thomas, Kevin Moeggenborg, Victor M. Torres, Darren Hansen

Keywords:

150 mm Diameter, Defect, Epitaxy, Uniformity, Wafer Shape

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References

[1] http: /www. mitsubishielectric. com/company/environment/ecotopics/technologies/tech/sic.

Google Scholar

[2] http: /www. rohm. com/documents/11308/2420552/SiC-whitepaper. pdf.

Google Scholar

[3] H. Fujibayashi, J. Ito, H. Ito, I. Kamata, M. Naito, K. Hara, S. Yamauchi, K. Suzuki, M. Yajima, S. Mitani, K. Suzuki, H. Aoki, K. Nishikawa, T. Kozawa, and H. Tsuchida, Applied Physics Express Vol. 7, 015502 (2014), pp.015502-1.

DOI: 10.7567/apex.7.015502

Google Scholar

[4] A.A. Burk, D. Tsvetkov, D. Barnhardt, M.J. O'Loughlin, L. Garrett, P. Towner, J. Seaman, E. Deyneka, Y. Khlebnikov, and J. Palmour, Materials Science Forum Vols. 717-720 (2014), p.552.

DOI: 10.4028/www.scientific.net/msf.717-720.75

Google Scholar

[5] B. Thomas, D. Hansen, J. Zhang, M.J. Loboda, J. Uchiyama, T.J. Toth, G. Chung, I.C. Manning, J.P. Quast, S.G. Mueller, Materials Science Forum, Vols. 778-780 (2014), p.103.

DOI: 10.4028/www.scientific.net/msf.778-780.103

Google Scholar