Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC

Johji Nishio; Hirokuni Asamizu; Chiaki Kudou; Sachiko Ito; Keiko Masumoto; Kentaro Tamura; Kazutoshi Kojima; Toshiyuki Ohno

doi:10.4028/www.scientific.net/MSF.821-823.169

Paper Titles

150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
p.153

Epitaxial Growth on 150 mm 2° off Wafers
p.157

Progress of SiC Epitaxy on 150mm Substrates
p.161

SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
p.165

Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC
p.169

Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers
p.173

Influence of Epi-Layer Growth Pits on SiC Device Characteristics
p.177

Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates
p.181

3C-SiC Crystal on Sapphire by Solution Growth Method
p.185

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Uniformity Improvement in Carrier Concentration on...

Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC

Abstract:

The guidelines necessary to improve the n-type doping uniformity on C-face epitaxial growth of 4H-SiC have been examined as far as the practical throughput is maintained, e.g. 3×150 mm wafers with the growth rate higher than 20 μm/h. The flow-channel enlargement was carried out and the effect was estimated by temperature distribution estimation performed by hydrogen etching. Also, effective C/Si was simulated with the temperature distribution obtained from the hydrogen etching experiments. As a result, positional agreement was found between the region where carrier concentration begins to increase and the drastic drop in temperature and the effective C/Si ratio.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

169-172

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.169

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Online since:

June 2015

Authors:

Johji Nishio*, Hirokuni Asamizu, Chiaki Kudou, Sachiko Ito, Keiko Masumoto, Kentaro Tamura, Kazutoshi Kojima, Toshiyuki Ohno

Keywords:

4H-SiC, Carrier Concentration, C-Face, Epitaxial Growth, Uniformity

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