Influence of Epi-Layer Growth Pits on SiC Device Characteristics

Abstract:

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 177-180
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.177
• Online since: June 2015
• Authors: Chiaki Kudou*, Hirokuni Asamizu, Kentaro Tamura, Johji Nishio, Keiko Masumoto, Kazutoshi Kojima, Toshiyuki Ohno
• Keywords: 4H-SiC Epitaxial Growth, Aspect Ratio, Carbon to Silicon Ratio, Growth Pit, Leakage Current

References

[1] http: /www. rohm. com/products/discrete/sic.

[2] http: /www. cree. com/products/power. asp.

[3] M. Uchida et al., the IEEE International Electron Devices Meeting 2011, p.602, (2011).

[4] K. Masumoto et al., Journal of Crystal Growth 139–143, 381 (2013).

[5] H. Fujiwara et al., Appl. Phys. Lett. 100 (2012), 242102.

[6] H. Fujiwara et al., Appl. Phys. Lett. 101 (2012), 042104.

[7] M. Kitabatake, ECS Transactions, 58(4) 17-23 (2013).

[8] J. Sameshima et al., Materials Science Forum Vols. 740-742 (2013) pp.745-748.

[9] H. Fujiwara et al., Appl. Phys. Lett. 87 (2005), 051912.