SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor

Tobias Höchbauer; Mario Leitner; Ronny Kern; Matthias Künle

doi:10.4028/www.scientific.net/MSF.821-823.165

Paper Titles

Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers
p.149

150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
p.153

Epitaxial Growth on 150 mm 2° off Wafers
p.157

Progress of SiC Epitaxy on 150mm Substrates
p.161

SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
p.165

Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC
p.169

Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers
p.173

Influence of Epi-Layer Growth Pits on SiC Device Characteristics
p.177

Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates
p.181

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823SiC Epitaxial Growth in a 7x100mm/3x150mm...

SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor

Abstract:

We present results on the homo-epitaxial growth on the Si face of 100 mm and 150 mm (0001)-oriented (4° off-orientation) 4H SiC wafers utilizing the horizontal hot-wall batch reactor Probus-SiC^TM from Tokyo Electron Limited. Standard epitaxial growth processes show very high levels of intra-wafer, intra-run wafer-to-wafer, and run-to-run uniformities in the layer thickness as well as in the n-type doping concentration. N-type background doping levels less that 5e13 /cm³ have been reached. AFM measurements reveal a surface roughness of 0.2nm (rms). The density of epitaxy related defects such as triangular defects, carrots, and ingrown particles due to downfall are very low, as confirmed by high blocking yields.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2014

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

165-168

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.165

Citation:

Cite this paper

Online since:

June 2015

Authors:

Tobias Höchbauer, Mario Leitner, Ronny Kern, Matthias Künle

Keywords:

100 mm Diameter, 150 mm Diameter, Hot-Wall Batch Reactor, SiC Epitaxy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] C. Hecht, R. Stein, B. Thomas, L. Wehrhahn-Kilian, J. Rosberg, H. Kitahata and F. Wischmeyer, Materials Science Forum 645-648, 89 (2010).

DOI: 10.4028/www.scientific.net/msf.645-648.89

Google Scholar

[2] A. A. Burk, D. Tsvetkov, M. J. O'Loughlin, S. Ustin, L. Garrett, A.R. Powell, J. Seaman and N. Partin, Materials Science Forum 778-780, 113 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.113

Google Scholar

[3] B. Thomas, D.M. Hansen, J. Zhang, M.J. Loboda, J. Uchiyama, T.J. Toth, G. Chung, I.C. Manning, J.P. Quast, and S.G. Mueller, Materials Science Forum 778-780, 103 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.103

Google Scholar