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Materials Science Forum Vols. 83-87

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87

ToC:

Table of Contents

Paper Title Page

Dopant Diffusion in Si0.7Ge0.3
Authors: D. Mathiot, Jean Claude Dupuy
1303
Characterisation of Dislocations in the Presence of Transition Metal Contamination
Authors: V. Higgs, Edward C. Lightowlers, Carl E. Norman, P. Kightley
1309
Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon
Authors: K. Weronek, Joerg Weber, A. Höpner, F. Ernst, R. Buchner, M. Stefaniak, H. Alexander
1315
Photoluminescence and Electronic Structure of Dislocations in Si Crystals
Authors: Yu. Lelikov, Yu. Rebane, S. Ruvimov, D. Tarhin, A. Sitnikova, Yu. Shreter
1321
Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence
Authors: Michio Tajima, Hiroshi Takeno, Takao Abe
1327
Theoretical Study on the Structure and Properties of Dislocations in Semiconductors
Authors: Kinichi Masuda-Jindo
1333
Solid State Processes at the Atomic Level
Authors: A. Ourmazd, F.H. Baumann, M. Bode, Y. Kim, J.A. Rentschler
1339
Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices
Authors: Q.M. Zhang, C. Wang, J. Bernholc
1351
Spatial Partition of Photocarriers Trapped at Deep Defects in Multiple Quantum Wells
Authors: D.D. Nolte, R.M. Brubaker, Q.N. Wang, M.R. Melloch
1357
Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells
Authors: Chris I. Harris, H. Kalt, Bo Monemar, P.O. Holtz, Peder Bergman, M. Sundaram, J.L. Merz, A.C. Gossard
1363

Showing 201 to 210 of 242 Paper Titles