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Materials Science Forum Vols. 83-87

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87

ToC:

Table of Contents

Paper Title Page

Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys
Authors: Mary Ellen Zvanut, W.E. Carlos, Mark E. Twigg, Robert E. Stahlbush, D.J. Godbey
1493
Comparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAs
Authors: F. Danie Auret, G. Myburg, L.J. Bredell, W.O. Barnard, H.W. Kunert
1499
Enhanced-Diffusion in Electron-Beam Doping of Semiconductors
Authors: Takao Wada, Michihiko Takeda, Toshiyuki Kondo
1503
High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient
Authors: A. Katz, A. Feingold, Stephen J. Pearton, M. Geva, S. Nakahara, E. Lane
1509
The Properties of Individual Si/SiO2 Defects and Their Link to 1/F Noise
Authors: Michael J. Uren
1519
Hydrogen Induced Defects and Defect Passivation in Silicon Solar Cells
Authors: Bhushan L. Sopori
1531
A Study of Radiation Induced Defects in Silicon Solar Cells Showing Solar Cells Showing Improved Radiation Resistance
Authors: Jan Peters, Tomas Markvart, Arthur F.W. Willoughby
1539
Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes
Authors: Jerzy M. Langer, P. Revva
1545
Recombination-Enhanced Diffusion of Be in GaAs
Authors: Masashi Uematsu, Kazumi Wada
1551
Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors
Authors: F. Ren, T.R. Fullowan, J.R. Lothian, P.W. Wisk, C.R. Abernathy, R.F. Kopf, A.B. Emerson, Stephen J. Pearton, S.W. Downey
1557

Showing 231 to 240 of 242 Paper Titles

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