A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT

Renichi Yamada; Norifumi Kameshiro; Yoshiaki Toyota; Takashi Hirao; Kan Yasui; Hidekatsu Onose; Kazuhiro Mochizuki; Hiroshi Miki; Natsuki Yokoyama; Hiroyuki Okino; Hiroyuki Matsuhima; Tetsuo Oda; Jiro Hasegawa; Mutsuhiro Mori

doi:10.4028/www.scientific.net/MSF.858.1091

Paper Titles

Development of a PSpice Model for SiC MOSFET Power Modules
p.1074

High-Temperature Transient Thermal Analysis for SiC Power Modules
p.1078

Utilization of SiC MOSFETs in Voltage Source Inverter of Inductive Power Transfer Systems for Enduring Capacitive Loads
p.1082

Application of 25mΩ SiC MOSFETs in a 10kVA Grid-Connected AC/DC Converter
p.1087

A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT
p.1091

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance
p.1095

Newly Developed Switching Analysis Method for 3.3 kV 400 a Full SiC Module
p.1099

Novel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC
p.1103

3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device
p.1107

HomeMaterials Science ForumMaterials Science Forum Vol. 858A Highly Efficient 3.3-kV SiC-Si Hybrid Power...

A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT

Abstract:

A 3.3-kV SiC-Si hybrid module, composed of a low-forward-voltage (V_F) SiC junction-barrier-Schottky (JBS) diode and a low-saturation-voltage V_CE(sat) Si trench IGBT was fabricated and demonstrated highly efficient operation.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

1091-1094

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1091

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Online since:

May 2016

Authors:

Renichi Yamada*, Norifumi Kameshiro, Yoshiaki Toyota, Takashi Hirao, Kan Yasui, Hidekatsu Onose, Kazuhiro Mochizuki, Hiroshi Miki, Natsuki Yokoyama, Hiroyuki Okino, Hiroyuki Matsuhima, Tetsuo Oda, Jiro Hasegawa, Mutsuhiro Mori

Keywords:

Hybrid Module, Junction Barrier Schottky (JBS) Diode, Schottky Barrier Diode (SBD)

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