3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device

Yutaka Furubayashi; Takafumi Tanehira; Kei Yonemori; Nobuhide Seo; Shin Ichiro Kuroki

doi:10.4028/www.scientific.net/MSF.858.1107

Paper Titles

A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT
p.1091

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance
p.1095

Newly Developed Switching Analysis Method for 3.3 kV 400 a Full SiC Module
p.1099

Novel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC
p.1103

3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device
p.1107

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect
p.1112

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC(0001) and SiC(000-1) Substrates
p.1121

The Interaction between Graphene and the SiC Substrate: Ab Initio Calculations for Polar and Nonpolar Surfaces
p.1125

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)
p.1129

HomeMaterials Science ForumMaterials Science Forum Vol. 8583D Integration of Si-Based Peltier Device onto...

3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device

Abstract:

We propose 3-D integration of Peltier device onto a power device. In order to transport a heat from the power device, as a suitable material of the Peltier device, silicon was adopted because of its high Seebeck coefficient, high thermal conductivity, and applicability to semiconductor process. Bulk Si-based Peltier devices with conventional shape showed an active thermal transport over a Joule heat at the operation current less than 5 A. 3-D integration of 4H-SiC-based Schottky barrier diodes and Si-based film Peltier device, separated by intrinsic SiC layer, was realized by using conventional Si-based process flow.