Newly Developed Switching Analysis Method for 3.3 kV 400 a Full SiC Module

Satoshi Hatsukawa; Shigenori Toyoshima; Takashi Tsuno; Yasuki Mikamura

doi:10.4028/www.scientific.net/MSF.858.1099

Paper Titles

Utilization of SiC MOSFETs in Voltage Source Inverter of Inductive Power Transfer Systems for Enduring Capacitive Loads
p.1082

Application of 25mΩ SiC MOSFETs in a 10kVA Grid-Connected AC/DC Converter
p.1087

A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT
p.1091

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance
p.1095

Newly Developed Switching Analysis Method for 3.3 kV 400 a Full SiC Module
p.1099

Novel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC
p.1103

3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device
p.1107

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect
p.1112

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC(0001) and SiC(000-1) Substrates
p.1121

HomeMaterials Science ForumMaterials Science Forum Vol. 858Newly Developed Switching Analysis Method for 3.3...

Newly Developed Switching Analysis Method for 3.3 kV 400 a Full SiC Module

Abstract:

We have demonstrated a new analysis method using a precise equivalent circuit of 3.3 kV 400 A full SiC modules and showed that the calculated waveforms well agree with the measured waveforms. We have also examined the current distribution in the module by utilizing this equivalent circuit model.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

1099-1102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1099

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Online since:

May 2016

Authors:

Satoshi Hatsukawa*, Shigenori Toyoshima, Takashi Tsuno, Yasuki Mikamura

Keywords:

Module, MOSFET, Q3D, Schottky Barrier Diode (SBD), SPICE

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References

[1] M. Bhatnagar, B.J. Baliga, IEEE Trans. Electron Devices, 40 (1993) 645-655.

Google Scholar

[2] Z. Stum, A.V. Bolotnikov, P. A. Losee, K. Matocha, S. Arthur, J. Nasadoski, R. R. Rao, O.S. Saadeh, L. Stevanovic, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, Mater. Sci. Forum., 679-680 (2011) 637-640.

DOI: 10.4028/www.scientific.net/msf.679-680.637

Google Scholar

[3] A. Bolotnikov, P. Losee, K. Matocha, K., J. Glaser, J. Nasadoski, Wang Lei, A. lasser, S. Arthur, Z. Stum, P. Sandvik, Y. Sui, T. Johnson, J. Sabate, L. Stevanovic, in Proc. Int. Symp. Power Semicond. Devices ICs (2012) 389-392.

DOI: 10.1109/ispsd.2012.6229103

Google Scholar

[4] K. Wada, H. Tamaso, S. Itoh, K. Kanbara, T. Hiyoshi, S. Toyoshima, J. Genba, H. Tokuda, T. Sugimura, H. Michikoshi, T. Tsuno, Y. Mikamura, Mater. Sci. Forum. 821-823 (2015) 592-595.

DOI: 10.4028/www.scientific.net/msf.821-823.592

Google Scholar

[5] M. Barnes, E. Blackmore, G.D. Wait, J. Lemire-Elmore, B. Rablah, G. Leyh, M.N. Nguyen, C. Pappas, IEEE Trans. Plasma Science, 33 (2005), 1252-1261.

DOI: 10.1109/tps.2005.852388

Google Scholar