Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance

Masayuki Yamamoto; Yasunori Tanaka; Tsutomu Yatsuo; Koji Yano

doi:10.4028/www.scientific.net/MSF.858.1095

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Cascode Configuration of SiC-BGSIT and Si-MOSFET...

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance

Abstract:

We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an alternative switching device of the SiC-MOSFET. It is shown that the transconductance of our cascode device is much higher than that of commercial SiC-MOSFETs while the switching speed is much faster than that of normally-off SiC-BGSITs. The origin of the fast switching speed in this cascode configuration is discussed in terms of a simulated reverse transfer capacitance.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

1095-1098

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1095

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Online since:

May 2016

Authors:

Masayuki Yamamoto*, Yasunori Tanaka, Tsutomu Yatsuo, Koji Yano

Keywords:

Cascode Configuration, Silicon Carbide (SiC), Static Induction Transistor (SIT), Transconductance

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