Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)

Filippo Giannazzo; Giuseppe Nicotra; Ioannis Deretzis; Aurora Piazza; Gabriele Fisichella; S. Agnello; Corrado Spinella; Antonino La Magna; Fabrizio Roccaforte; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.858.1129

Paper Titles

3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device
p.1107

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect
p.1112

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC(0001) and SiC(000-1) Substrates
p.1121

The Interaction between Graphene and the SiC Substrate: Ab Initio Calculations for Polar and Nonpolar Surfaces
p.1125

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)
p.1129

Wafer-Scale Graphene on 4-Inch SiC
p.1133

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures
p.1137

Amplification in Graphene Nanoribbon Junctions
p.1141

Modified Epitaxial Graphene on SiC for Extremely Sensitive and Selective Gas Sensors
p.1145

HomeMaterials Science ForumMaterials Science Forum Vol. 858Interfacial Disorder of Graphene Grown at High...

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)

Abstract:

This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal treatments at high temperatures (from 1850 to 1950 °C) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy shoed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr growth on the C-face of SiC under these annealing conditions and the role of this disordered layer in the suppression of epitaxy between Gr and the substrate have been discussed.