Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs

Abstract:

Gamma-ray irradiation effects of motor-driver circuit composed of SiC MOSFETs under motor driving with different PWM frequencies were investigated. The driving current and voltage waveforms were normal when the irradiation exceeded 1.1 MGy at PWM frequency of 10 kHz. In addition, the motor was still rotating in this total dose. We compared the irradiation responses of SiC MOSFETs between the cases of driving states and no bias. The drain current – gate voltage characteristics with no bias shifted to the negative voltage side wider than the driving states. Also the leakage current in the case of driving state is fewer than that of no bias.

• Periodical: Materials Science Forum (Volume 858)
• Pages: 868-871
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.858.868
• Online since: May 2016
• Authors: Yugo Kobayashi*, Takashi Yokozeki, Takuma Matsuda, Satoshi Mitomo, Koichi Murata, Michihiro Hachisuka, Yasuyoshi Kaneko, Takahiro Makino, Akinori Takeyama, Shinobu Onoda, Takeshi Ohshima, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata
• Keywords: Gamma-Ray Irradiation, Motor-Driver Circuit, SiC MOSFET

References

[1] T. Ohshima et al.: Radiation response of silicon carbide diodes and transistors. INTECH Open Access Publisher (2012).

[2] T. Yokoseki et al.: Mater. Sci. Forum 821-823 (2015) 705.

[3] Y. Tanaka et al.: Mater. Sci. Forum 645-648 (2010) pp.941-944.

[4] K.K. Lee et al: IEEE Trans. Nucl. Sci. 50(2003) pp.194-200.

[5] James. -R et al: IEEE. Nucl and Spa. Rad. Effect. Short course Notebook: Total-Dose Effects in MOS Devices, (2011).