High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness

Peter A. Losee; Alexander Bolotnikov; Stacey Kennerly; Christopher Collazo-Davila; David Lilienfeld; Greg Dunne; Thomas Gorczyca; Peter Deeb; James Kretchmer; David Esler; Ljubisa Stevanovic

doi:10.4028/www.scientific.net/MSF.858.876

Paper Titles

Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature
p.860

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation
p.864

Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs
p.868

Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs
p.872

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
p.876

Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs
p.880

Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C
p.885

Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs
p.889

Readiness of SiC MOSFETs for Aerospace and Industrial Applications
p.894

HomeMaterials Science ForumMaterials Science Forum Vol. 858High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with...

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness

Abstract:

In this paper, we show state of the art, low on-resistance, 25mW/1.2kV and 43mW/2.5kV SiC MOSFETs with excellent design robustness and process control such that the parametric spread of key device characteristics are approaching Si products. The impact of starting material variability on device performance is shown and design sensitivity curves are presented.